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TPCA8022-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCA8022-H
Switching Regulator Applications Motor Drive Applications DC/DC Converter Applications
6.00.3
Unit: mm
0.50.1 1.27 8 0.40.1 5 0.05 M A
5.00.2
* * * * * *
Small footprint due to a small and thin package High speed switching Low drain-source ON-resistance
: RDS (ON) = 17 m (typ.) (VGS=10V, ID=11A)
0.150.05
1 0.950.05
4
0.595 A
High forward transfer admittance: |Yfs| = 46 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
5.00.2
0.05 S S 1 0.60.1 4 1.10.2
4.250.2
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR
Rating 100 100 20 22 66 45 2.8
Unit V V V A W W
1,2,3SOURCE 5,6,7,8DRAIN
8
5 0.80.1
4GATE
JEDEC JEITA TOSHIBA
2-5Q1A
Pulsed (Note 1) (Tc=25) (t = 10 s) (Note 2a)
Drain power dissipation Drain power dissipation
Weight: 0.069 g (typ.)
Drain power dissipation
(t = 10 s) (Note 2b)
Circuit Configuration
1.6 W
8
197 22 3.8 150 -55 to 150 mJ A mJ C C
7
6
3.50.2
Absolute Maximum Ratings (Ta = 25C)
0.1660.05
5
Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range
EAR Tch Tstg
1
2
3
4
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
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TPCA8022-H
Thermal Characteristics
Characteristic Thermal resistance, channel to case (Tc=25) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-c) Max 2.78 Unit C/W
Rth (ch-a)
44.6
C/W
Thermal resistance, channel to ambient (t = 10 s) (Note 2b)
Rth (ch-a)
78.1
C/W
Marking (Note 5)
TPCA 8022-H
*
Type Lot No.
Note 1: The channel temperature should not exceed 150C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
(a)
(b)
Note 3: VDD = 50 V Tch = 25C (initial) L = 0.5 mH RG = 25 IAR = 22 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)
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TPCA8022-H
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Gate-Resistance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("Miller") charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD 80 V, VGS = 10 V, ID = 22 A - Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss Rg tr VGS ton 10 V 0V 4.7 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 11 A VDS = 10 V, ID = 11 A Min 100 2.0 23 ID = 11 A VOUT RL = 4.5 Typ. 17 46 2330 110 420 1.5 4.8 14 6.7 42 38 9.8 10 14 Max 10 10 4.0 26 ns nC pF Unit A A V V m S
VDD 50 V - Duty < 1%, tw = 10 s =
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Drain reverse current Forward voltage (diode) Pulse Symbol IDRP VDSF Test Condition IDR = 22 A, VGS = 0 V Min Typ. Max 66 -1.2 Unit A V
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TPCA8022-H
ID - VDS
20 10 16 8 6 5 4.8 4.7 Common source Ta = 25C Pulse test 20 10 16 8 4.8 5 6
ID - VDS
4.7 4.6 Common source Ta = 25C Pulse test
(A)
4.6
ID
ID
(A)
12 4.5 8
12
4.5
Drain current
Drain current
8
4.4
4.3 4 VGS = 4V 0 0 0.2 0.4 0.6 0.8 1
4
VGS = 4.2V
0 0
1
2
3
4
5
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
40 Common source VDS = 10 V Pulse test 1.0
VDS - VGS (V)
Common source Ta = 25C Pulse test
0.8
ID
VDS Drain-source voltage
0.6
Drain current
(A)
30
20 Ta = -55C 10 100 25
0.4
ID = 22 A
0.2
11 5.5
0 0
2
4
6
8
10
0
0
2
4
6
8
10
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
Yfs - ID (S)
1000 Common source VDS = 10 V Pulse test 100 100 Common source Ta = 25 Pulse test
RDS (ON) - ID
|Yfs|
Forward transfer admittance
Ta = -55C 10 100 1 25
Drain-source ON-resistance RDS (ON) (m)
10
VGS = 10 V
0.1 0.1
1
10
100
1 0.1
1
10
100
Drain current
ID
(A)
Drain current
ID
(A)
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TPCA8022-H
RDS (ON) - Ta
50 Common source Pulse test 100
IDR - VDS (A)
Common source Ta = 25C Pulse test 10 4.5 3
Drain-source ON-resistance RDS (ON) (m)
40
IDR Drain reverse current
22A
10
30 ID = 5.5A,11A 20
1
10
VGS = 10 V
1 0.1 0
VGS = 0 V -0.6 -0.8 -1.0
0 -80
-40
0
40
80
120
160
-0.2
-0.4
Ambient temperature
Ta
(C)
Drain-source voltage
VDS
(V)
Capacitance - VDS
10000 6.0
Vth - Ta
Vth (V) Gate threshold voltage
Ciss
(pF)
4.5
1000 Coss
Capacitance
C
3.0
100
Crss Common source VGS = 0 V f = 1 MHz Ta = 25C
Common source 1.5 VDS = 10 V ID = 1 mA Pulse test 0 -80 -40 0 40 80 120 160
10 0.1
1
10
100
Drain-source voltage
VDS
(V)
Ambient temperature
Ta
(C)
Dynamic input/output characteristics
100 Common source ID = 22 A Ta = 25C Pulse test 20
(V)
80
VDS
16
VDS
Drain-source voltage
VDD = 20 V 40 40 80 20 4 8
0 0
10
20
30
0 40
Total gate charge
Qg
(nC)
Gate-source voltage
60
12
VGS
(V)
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TPCA8022-H
rth - tw (C/W)
1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc=25 (2)
100
rth
(1)
Transient thermal impedance
10
1
(3)
0.1 Single - pulse 0.01 0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse width
tw
(s)
PD - Ta
3.0
(1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) 10s
PD - Tc
50
(W)
2.5
(1)
(W)
40
PD
Drain power dissipation
Drain power dissipation
2.0 (2) 1.5
PD
30 20 10 0
1.0
0.5
0 0
40
80
120
160
0
40
80
120
160
Ambient temperature
Ta
(C)
Case temperature
TC
(C)
Safe operating area
100 ID max (Pulse) * t =1ms * ID max (Continuous) t =10ms * 1 DC Operation Tc=25
(A) Drain current ID
10
0.1
* Single - pulse Ta=25 Curves must be derated linearly with increase in temperature. 1 10
0.01 0.1
VDSS max 100
Drain-source voltage
VDS
(V)
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TPCA8022-H
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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2007-02-09

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